Process for manufacturing a dual charge storage location memory cell

ABSTRACT

A process for manufacturing a dual charge storage location electrically programmable memory cell that includes the steps of forming a central insulated gate over a semiconductor substrate; forming physically separated charge-confining layers stack portions of a dielectric-charge trapping material-dielectric layers stack at the sides of the central gate, the charge trapping material layer in each charge-confining layers stack portion forming a charge storage element; forming side control gates over each of the charge-confining layers stack portions; forming memory cell source/drain regions laterally to the side control gates; and electrically connecting the side control gates to the central gate. Each of the charge-confining layers stack portions at the sides of the central gate is formed with an “L” shape, with a base charge-confining layers stack portion lying on the substrate surface and an upright charge-confining layers stack portion lying against a respective side of the insulated gate.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from European patent applicationno. 01830634.0, filed Oct. 8, 2001, entitled PROCESS FOR MANUFACTURING ADUAL CHARGE STORAGE LOCATION MEMORY CELL, presently pending.

BACKGROUND OF THE INVENTION

The present invention relates generally to the field of semiconductormemories, particularly non-volatile memories and still more particularlyto electrically programmable non-volatile memories. More specifically,the invention concerns dual charge storage location non-volatilesemiconductor memory cells and, in particular, the manufacturingthereof.

As known, the information storage mechanism in non-volatile memory cellssuch as EPROMs, EEPROMs and Flash EEPROMs is based on the possibility ofhaving an electric charge trapped in a charge storage element. Thepresence of the electric charge in the charge storage element causes achange in the memory cell threshold voltage, that can be assessed bymeasuring a current sunk by the memory cell in a prescribed biascondition.

Typically, the charge storage element is represented by a polysiliconfloating gate insulatively placed over the memory cell channel regionand capacitively coupled to a control gate. Charge carriers can beinjected into the floating gate by means of the hot electron injectionmechanism, as in EPROMs and Flash EPROMs, or by tunnelling, as inEEPROMs. The presence of an electric charge in the floating gate affectsthe formation of a conductive channel in the channel region.

Up to some years ago, each memory cell was used to store one bit ofinformation, corresponding to the absence of charge in the floating gate(a condition conventionally interpreted as a logic “1”) or the presence(logic “0”) in the floating gate of an electric charge equal to orgreater than a prescribed minimum amount.

The constant trend towards the increase of semiconductor memory storagecapacity per unit chip area has however suggested that each memory cellcould be used to store more than one bit.

Memory cells have therefore been proposed having multiple thresholdvoltage levels. In such memory cells, commonly referred to asmulti-level memory cells, the amount of charge trapped in the floatinggate is precisely controlled and can take more than two values, forexample four. To each value of electric charge there corresponds arespective threshold voltage of the memory cell. A multi-level memorycell having for example four admissible threshold voltages is able tostore two bits.

More recently, memory cells having two charge storage locations havebeen proposed. In these memory cells it is possible to have an electriccharge trapped in two physically distinct locations of the memory cell,normally at each side of the channel region thereof, near thesource/drain regions.

Two types of dual charge storage location memory cells are known in theart.

A first type of dual charge storage location memory cell is describedfor example in U.S. Pat. No. 5,949,711. The memory cell comprises acontrol gate insulatively placed over a channel region. At both sides ofthe control gate, near the source/drain diffusions, two electricallyisolated spacers of polysilicon form two floating gates.

Charge can be selectively injected into each floating gate and betrapped therein. Each floating gate controls a short portion of thememory cell channel.

Each one of the source/drain diffusions acts as a source electrode whenreading the value of the charge trapped in the adjacent floating gate,and as a drain electrode when reading the value of the charge trapped inthe opposite floating gate.

As the traditional single bit or multi-level memory cells having asingle floating gate, this dual charge storage location memory cellrelies for its operation on the capacitive coupling between the controlgate and the two floating gates.

However, due to the physical location of the two floating gates at thesides of the control gate, the areas of coupling between the latter andthe former are rather small. The capacitive coupling between the controlgate and the floating gate is therefore scarce, thus allowing a smallamount of charge to be injected.

A second type of dual charge storage location memory cells is describedfor example in U.S. Pat. No. 6,201,282 B1. In this case the memory cellcomprises a control gate insulatively placed over a channel region withinterposition of an oxide-nitride-oxide (ONO) stack of layers. Chargecan be injected into and trapped in two separated and separatelychargeable areas found within the nitride layer, near the memory cellsource/drain regions. The latter, as in the dual charge storage locationmemory cell described above, change their role while reading the chargetrapped in one or the other of the two areas.

Compared to the one previously described, this dual charge storagelocation memory cell requires one less polysilicon layer, whichsimplifies the manufacturing process. However, this structure isaffected by problems of confinement of the charge in the two areaswithin the nitride layer. It is in fact difficult to keep the twocharges separated, since there is no physical separation therebetween.This problem arises in the memory cell writing and erasing operations,as well as during the memory cell life, and may cause the loss of thestored information.

In U.S. Pat. No. 6,248,633 B1 a dual charge storage location memory cellwith a twin MONOS structure is disclosed. The memory cell comprises twopolysilicon sidewall control gates placed over a composite ONO stack onboth sides of a polysilicon word gate. The latter is placed over a gateoxide layer.

The nitride within the ONO stack of layers which is under each sidewallcontrol gate is the region for electron memory storage. Since the twonitride layer regions under the two sidewall control gates arephysically separated from each other, this structure appears not to beaffected by the problem of charge confinement previously discussed.

However, the various processes for manufacturing the MONOS dual chargestorage location memory cell described in that document appear to theApplicant rather complicated. For example, use is made of disposablepolysilicon sidewall spacers to fabricate the memory cell channel, whichincreases the process steps.

In view of the state of the art described, it has been an object of thepresent invention to provide an alternative manufacturing process for adual charge storage location electrically programmable memory cell.

SUMMARY OF THE INVENTION

According to an aspect of the present invention, there is provided aprocess for manufacturing a dual charge storage location electricallyprogrammable memory cell. The process provides for forming a centralinsulated gate over a semiconductor substrate; forming physicallyseparated charge confining stack portions of a dielectric-chargetrapping material-dielectric layers stack at the sides of the centralgate, the charge trapping material layer in each charge confining stackportion forming a charge storage element; forming side control gatesover each of the charge confining stack portions; forming memory cellsource/drain regions laterally to the side control gates; electricallyconnecting the side control gates to the central gate.

Each of the charge confining stack portions at the sides of the centralgate is formed with an “L” shape, with a base charge-confining stackportion lying on the substrate surface and an upright charge confiningstack portion lying against a respective side of the central gate.

According to another aspect of the present invention, there is provideda process for manufacturing an array of dual charge storage locationelectrically programmable memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

The features and advantages of the present invention will be madeapparent by the following detailed description of some embodimentsthereof, provided merely by way of non-limitative examples withreference to the attached drawings, wherein:

FIGS. 1A to 1M are cross-sectional views showing some steps of amanufacturing process according to a first embodiment of the presentinvention;

FIG. 1N is an enlarged cross-sectional view of a dual charge storagelocation memory cell obtained by the process according to the firstembodiment of the invention;

FIG. 1P is an electrical equivalent diagram of the memory cell of FIG.1N;

FIGS. 2A to 2H are cross-sectional views showing some steps of amanufacturing process according to a second embodiment of the presentinvention;

FIG. 2I is an enlarged cross-sectional view of a dual charge storagelocation memory cell obtained by the process according to the secondembodiment of the invention;

FIGS. 3A to 3G are cross-sectional views showing some steps of amanufacturing process according to a third embodiment of the presentinvention;

FIG. 3H is an enlarged cross-sectional view of a dual charge storagelocation memory cell obtained by the process according to the thirdembodiment of the invention;

FIGS. 4A to 4E are cross-sectional views showing some steps of amanufacturing process according to a fourth embodiment of the presentinvention; and

FIG. 4F is an enlarged cross-sectional view of a dual charge storagelocation memory cell obtained by the process according to the fourthembodiment of the invention.

In the following, same reference numerals will be adopted to identifysame parts in the different embodiments of the invention, which will bedescribed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIGS. 1A to 1M are schematic cross-sectional views showing a portion ofa memory cell array during the main steps of a manufacturing processaccording to a first embodiment of the present invention.

With reference to FIG. 1A, reference numeral 11 indicates asemiconductor, e.g. silicon, substrate, or alternatively a doped wellformed in a semiconductor substrate (in this case, the substrate beingnot visible in the drawings). In the context of this description theterm substrate is to be intended as encompassing both of thealternatives. For example, the semiconductor substrate is of the Pconductivity type and has a doping level of 10¹⁵ to 10¹⁸ atoms/cm³.

On a top surface of the semiconductor substrate 11, a layer 12 of oxideis formed. The oxide layer 12, for example a silicon dioxide layerhaving preferably a thickness ranging from 50 to 200 Å, isconventionally formed by thermal growth or by chemical vapor deposition(CVD) and will form a gate oxide of the memory cells. As an alternativeto silicon dioxide, other dielectric materials can be used, inparticular dielectric materials having a dielectric constant higher thanthe silicon dioxide.

As schematically shown in FIG. 1B, dopant ions 13 are then implantedinto the substrate 11 through the gate oxide layer 12. The implanteddopant ions are then made to diffuse through the substrate 11 by meansof a thermal treatment, to form a doped layer 14 in correspondence ofthe top surface of the substrate 11. Alternatively, the dopant ions areimplanted and simply activated, instead of being made to diffuse. Theimplanted ions are for example of a P type dopant, such as boron, andare implanted in a dose ranging from 1×10¹² to 5×10¹³ ions/cm². Thedoped layer 14 has the function of setting the threshold voltage andcontrolling the punch-through of the memory cells to be formedindependently of the doping level of the substrate 11.

Referring to FIG. 1C, a first layer 15 of polysilicon is then formed,for example by CVD, over the gate oxide layer 12. Preferably, the firstpolysilicon layer 15 has a thickness ranging from 500 to 3000 Å. Thefirst polysilicon layer can be doped to increase the conductivitythereof.

By means of a conventional photolithographic and etching process, thefirst polysilicon layer 15 and the underlying gate oxide layer 12 areselectively removed. As shown in FIG. 1D, stripes 16 of the firstpolysilicon layer 15 and of the gate oxide layer 12 extendingorthogonally to the plane of the drawings are thus defined in the memorycell array region. Optionally, at least a shallow memory cell writeenhancement implant is performed. P type dopant ions 17, for example ofboron, are implanted in a dose ranging from 1×10¹² to 5×10¹³ ions/cm². Ptype doped regions 18 with a different, in particular higher dopinglevel than the P type doped layer 14 are thus formed in between thestripes 16. The doped regions 18, which may extend parallel to thestripes 16, increase the efficiency of the electron injection mechanismexploited for writing the memory cells, by improving the hot electrongeneration process, and thus increase the memory cells writingefficiency.

Referring now to FIG. 1E, a stack of three layers is formed over the topsurface of the structure. The stack comprises a bottom layer 19 ofoxide, an intermediate layer 110 of silicon nitride and a top layer 111of oxide. The oxide-nitride-oxide or ONO stack can be formed by thermalgrowth or CVD, and preferably has an overall equivalent thicknessranging from 100 to 200 Å. For example, each one of the three layers 19,110 and 111 has an equivalent thickness of 50 Å. From the nitride layer110 the charge storage elements of the memory cells will be formed.

A second layer 112 of polysilicon is then formed, for example bydeposition, over the ONO layer stack 19, 110, 111, as shown in FIG. 1F.The second polysilicon layer 112 has for example a thickness rangingfrom 300 to 1500 Å. The second polysilicon layer can be doped toincrease the conductivity thereof.

The second polysilicon layer 112 is then etched by means of ananisotropic plasma etch process, for example a Reactive Ion Etch (RIE).As shown in FIG. 1G, as a result of the etch process, polysiliconsidewall spacers 113A, 113B are left at the sides of the ONO stack 19,110, 111 in correspondence of each stripe 16 of the first polysiliconlayer 15 and gate oxide layer 12. The sidewall spacers will form lateralcontrol gates of the memory cells.

Then, as shown in FIG. 1H, N type dopant ions 114 are implanted and madeto diffuse so as to form, inside the P type doped regions 18, bit linediffusions 115 extending parallel to the stripes 16. The bit linediffusions 115 will form the bit lines of the memory cell array, as wellas source/drain regions for the memory cells. The dopant ions are forexample of arsenic, and are implanted in a dose ranging from 1×10¹⁵ to5×10¹⁵ ions/cm² at an energy suitable to obtain a shallow implant.Thanks to the presence of the sidewall spacers 113A, 113B, which maskthe implant, the bit line diffusions 115 are self-aligned to thesidewall spacers and are spaced apart from the edges of the P typeregions 18, i.e. from the edges of the stripes 16. Surface portions ofthe P type regions 18 from the edge thereof to the bit line diffusions115 will form lateral channel portions of the memory cells, controlledby the lateral control gates.

Referring to FIG. 1I, a third layer 116 of polysilicon, for example ofthickness ranging from 1000 to 3000 Å, is formed over the top surface ofthe structure, for example by CVD. The third polysilicon layer can bedoped to increase the conductivity thereof.

The third polysilicon layer 116 and the ONO stack 19, 110, 111 are thenremoved down to the first polysilicon layer 15, as depicted in FIG. 1L.Suitable removal techniques are for example a plasma etch process or achemical-mechanical polishing (CMP) or a combination of these twoprocesses. After this step, the top surface of the structure issubstantially flat. In the regions between the stripes 16 the thirdpolysilicon layer 116 fills the gaps existing between facing pairs ofsidewall spacers 113A, 113B.

With reference to FIG. 1M, a fourth layer 117 of polysilicon, forexample of thickness ranging from 1000 to 5000 Å, is formed over the topsurface of the structure, for example by CVD. The fourth polysiliconlayer can be doped to increase the conductivity thereof. Optionally, asilicide layer 118 can be formed at the top surface of the fourthpolysilicon layer 117 to further increase the conductivity thereof. Thesilicide layer can be formed by conventional process steps, providingfor depositing a layer of 200 to 2000 Å of a metal such as W or Ticapable of reacting with silicon, and performing a thermal treatment tomake the metal react with the underlying polysilicon.

The fourth polysilicon layer 117 and, if present, the silicide layer 118are then selectively removed by means of conventional photolithographicand etching techniques, to define stripes 119 transversal to theinitially formed stripes 16 and to the bit line diffusions 115. Thestripes 119 form word lines of the memory cell array. The stripes 16 ofthe first polysilicon layer 15, the portions of the third polysiliconlayer 116, the spacers 113A, 113B and the ONO stack 19, 110, 111 arealso selectively etched to remove all these layers in the regionsbetween the word lines. Preferably, after this step a P type dopant suchas boron is implanted in a dose ranging for example from 1×10¹² to5×10¹³ ions/cm² and then made to diffuse into the doped layer 14 forpurposes of electrical isolation between the bit lines, in particular toprevent punch-through from occurring.

Referring to FIG. 1N, a conventional dielectric stack 120 with goodionic gettering properties is then placed over the top surface of thestructure. Preferably, the memory cell array is of the so-calledcontact-less type. Memory cell arrays of this type are typically made upof a plurality of sub-arrays or blocks of memory cells (extending forexample for 32, 64 or 128 word lines) free of contacts to the memorycells source/drain region. Contact openings 121 are formed in thedielectric layer 120 down to the surface of the bit line diffusions 115in prescribed areas externally to the memory cells sub-arrays. By meansof conventional contact formation and metallization techniques metal bitlines 123A, 123B are then defined running transversally to the wordlines 119 over the bit line diffusions 115, contacting the latter incorrespondence of such prescribed areas. The metal bit lines, which canhave alternative arrangements to the one shown, limit voltage dropsalong the bit line diffusions 115.

FIG. 1P is an electric equivalent diagram of the memory cell shown inFIG. 1N. The memory cell is equivalent to three MOS transistors T1, T2,T3 connected in series between the left-hand bit line 123A and theright-hand bit line 123B. The lateral transistors T1 and T3 have each acontrol gate, formed by the polysilicon sidewall spacers 113A, 113B,respectively, and a charge storage element formed by the portion 110A,110B of the ONO stack nitride layer 110 under the respective sidewallspacer. The central transistor T2 is a normal MOSFET, having a gateformed by the first polysilicon layer 15 and a channel formed by theportion of the doped layer 14 under the gate oxide 12. The gate oftransistor T2 and the control gates of transistors T1 and T3 are allconnected to the word line 119. In particular, the portions of the thirdpolysilicon layer 116 which fill the gaps between facing pairs ofsidewall spacers assure the electrical contact between the polysiliconsidewall spacers 113A, 113B and the gate of transistors T2 through theword line 119.

By applying suitable voltages to the word line 119 and to the bit lines123A, 123B (and thus to the bit line diffusions 115), electrons can beselectively injected into either one or both of the nitride layerportions 110A, 110B. Each one of the two lateral transistors T1 and T3can store different levels of charge, so as to combine the advantages ofa dual charge storage location memory cell with those of a multilevelmemory cell.

For reading the information stored in the memory cell, the two memorycell source/drain doped regions formed by the two bit line diffusions115 act as interchangeable source/drain regions S/D of the memory cell.Specifically, if it is desired to read the bit stored in transistor T1,the bit line diffusion 115 adjacent thereto behaves as a source, whilethe opposite bit line diffusion 115 acts as a drain. Bit line 123A isbiased to ground while bit line 123B is biased to, for example, 2 V. Theword line 119 is conventionally biased to the supply voltage VDD of thememory device (for example, approximately 3 V). Due to short-channeleffects taking place in transistor T3, the presence of a charge in theright-hand portion 110B of the nitride layer 110 does not influence theconductivity of transistor T3. A current or no current will flow fromthe bit line 123B to the bit line 123A only in consequence of theabsence or presence of a charge in the left-hand portion 110A of thenitride layer 110. The information stored in transistor T3 can be readby reversing the above conditions.

In the process according to the first embodiment of the invention, fourlayers of polysilicon are used.

FIGS. 2A to 2H schematically show the main steps of a process accordingto a second embodiment of the invention, which requires one less layerof polysilicon.

Similarly to the previously described embodiment, the process accordingto this second embodiment provides for forming on the substrate 11 thegate oxide layer 12 (FIG. 1A), implanting and diffusing dopant ions toform the doped layer 14 for setting the memory cells threshold voltage(FIG. 1B) and forming over the substrate top surface the firstpolysilicon layer 15 (FIG. 1C).

Referring to FIG. 2A, by means of a conventional photolithographic andetching process, the first polysilicon layer 15 is selectively removed.Stripes 26 of the first polysilicon layer 15 extending orthogonally tothe plane of the drawings are thus defined. Optionally, a writeenhancement implant is performed. P type dopant ions 27 are implantedand made to diffuse into the substrate 11 where the latter is notcovered by the first polysilicon layer stripes 26. Doped regions 28 ofthe P conductivity type with a higher doping level than the P type dopedlayer 14 are thus formed in between the stripes 26. The doped regions 28may extend parallel to the stripes 26. The dopants, implant doses andenergies can for example be the same as those previously specified inconnection with the first embodiment.

With reference to FIG. 2B, a layer 21 of oxide, for example silicondioxide, is formed over the top surface of the structure. The oxidelayer 21, which preferably has a thickness ranging from 100 to 500 Å,can be formed by CVD and has the function of etch stopper for afollowing etch process. Over the oxide layer 21 a layer 22 of siliconnitride is formed, for example by CVD. The nitride layer 22 preferablyhas a thickness ranging from 200 to 1000 Å.

As schematically shown in FIG. 2C, N type dopant ions 214 are thenimplanted and made to diffuse so as to form, inside the doped regions28, N type bit line diffusions 215 extending parallel to the stripes 26.The dopant ions and the implant dose are for example the same as thosespecified for the first embodiment, while a higher implant energy isused, in order to let the ions penetrate a thicker layer.

The nitride layer 22 acts as an implant mask for the implanted ions. Thebit line diffusions 215 are thus spaced apart from the edges of the Ptype doped regions 28, i.e. from the edges of the polysilicon stripes26. The surface portions of the P type regions 18 from the edge thereofto the bit line diffusions 215 will form lateral channel portions of thememory cells.

Afterwards, as shown in FIG. 2D, the nitride layer 22, the oxide layer21 and, where not covered by the polysilicon stripes 26, the gate oxidelayer 12 are removed by means of an etch process, down to thepolysilicon layer 15 and the substrate top surface, where the latter isnot covered by the polysilicon stripes 26. The gate oxide layer 12remains only under the polysilicon stripes 26.

Referring now to FIG. 2E, a stack of three layers is formed over the topsurface of the structure. The stack comprises a bottom layer 29 ofoxide, an intermediate layer 210 of silicon nitride and a top layer 211of oxide. The oxide-nitride-oxide or ONO layer stack can for examplehave the same characteristics as the ONO stack 19, 110, 111 of thepreviously described embodiment, and be formed in the same way. Thenitride layer 210 will form the charge retention elements of the memorycells.

As shown in FIG. 2F, a second layer 212 of polysilicon is then formed,for example by CVD, over the ONO stack 29, 210, 211. The secondpolysilicon layer 212 has for example a thickness ranging from 500 to4000 Å. Dopants can be added to the second polysilicon layer to increasethe conductivity thereof.

The second polysilicon layer 212 and the ONO stack 29, 210, 211 are thenremoved down to the polysilicon stripes 26, for example by means of aplasma etch or by CMP or a combination of these two processes. As shownin FIG. 2G, as a result of this step, the polysilicon stripes 26 areleft uncovered, and the space between the stripes 26 is filled byportions of the second polysilicon layer 212. The top surface of thestructure is substantially flat.

With reference to FIG. 2H, a third layer 216 of polysilicon, for exampleof thickness ranging from 500 to 2000 Å, is formed over the top surfaceof the structure. Dopants can be added to the third polysilicon layer toincrease the conductivity thereof. Optionally, a silicide layer 218 canbe formed on the top surface of the third polysilicon layer 216 tofurther increase the conductivity thereof.

The third polysilicon layer 216 and, if present, the silicide layer 218are then selectively removed by means of conventional photolithographicand etching techniques, to define stripes 219 transversal to the stripes26. The stripes 219 form word lines of the memory cell array. Thestripes 26 of the first polysilicon layer 15, the portions of the secondpolysilicon layer 212 and the ONO stack 29, 210, 211 are alsoselectively etched to remove all these layers in the regions between theword lines. Preferably, after this step a P type dopant such as boron isimplanted and made to diffuse into the doped layer 14 for purposes ofelectrical isolation between the bit lines, in particular to preventpunch-through from occurring.

Referring to FIG. 2I, a conventional dielectric stack 220 with goodionic gettering properties is then placed over the top surface of thestructure. As in the previous embodiment, contact openings 221 areformed in the dielectric layer 220 down to the surface of the bit linediffusions 215 in prescribed areas externally to memory cell sub-arrays.By means of conventional contact formation and metallization techniques,metal bit lines 223A, 223B are defined running transversally to the wordlines 219 over the bit line diffusions 215, contacting the latter incorrespondence of said prescribed areas. As for the first embodiment,other arrangements of the metal bit lines are possible.

The memory cell obtained by the process according to the secondembodiment of the invention is functionally identical to that depictedin FIG. 1N, and can be electrically described by means of the sameequivalent diagram of FIG. 1P. However, from a structural viewpoint thismemory cell differs from the one previously described, since it does nothave sidewall control gates formed by polysilicon sidewall spacers. Theportions of the second polysilicon layer 212 filling the spaces betweenthe first polysilicon layer 15 act as the control gate of transistors T1and T2. The portions 210A, 210B of the ONO stack nitride layer 210 arethe memory cell charge storage elements.

FIGS. 3A to 3G schematically show the main steps of a process accordingto a third embodiment of the invention which, as the second embodiment,requires only three layers of polysilicon. Similarly to the firstdescribed embodiment, the process according to this third embodimentprovides for forming on the substrate 11 the gate oxide layer 12 (FIG.1A), implanting and diffusing dopant ions to form the doped layer 14 forsetting the memory cells threshold voltage (FIG. 1B), forming over thesubstrate top surface the first polysilicon layer 15 (FIG. 1C), etchingthe first polysilicon layer 15 and the gate oxide 12 to form stripes 16and optionally performing the write enhancement implant to form thedoped regions 18 (FIG. 1D), and forming the ONO stack 19, 110, 111 overthe top surface of the structure.

Referring now to FIG. 3A, a material in the liquid phase is thendeposited by spinning the substrate 11 over the top surface of thestructure. The liquid-phase material is then made denser. Suitableliquid materials are for example an organic bottom anti-reflectingcoating (BARC) and a spin on glass (SOG). A film 31 is thus formed whichat least partially fills the recesses in the structure top surface, inparticular filling the spaces between the polysilicon stripes 16. TheONO stack over the polysilicon stripes 16 is substantially leftuncovered by the film 31.

As shown in FIG. 3B, the film 31 and the ONO stack 19, 110, 111 are thenremoved by etching from over the polysilicon stripes 16. Preferably, theetching is a plasma RIE. The presence of the film 31 in the spacesbetween the polysilicon stripes 16 protects from the etching agents theunderlying ONO stack, preventing the removal thereof. The remainingportions of the film 31 are then removed, to obtain the structure shownin FIG. 3C.

With reference to FIG. 3D, a second layer 312 of polysilicon is thenformed over the top surface of the structure. The second polysiliconlayer 322 can be formed by deposition, and preferably has a thicknessranging from 200 to 1000 Å. Dopants can be added to the secondpolysilicon layer to increase the conductivity thereof.

As shown schematically in FIG. 3E, N type dopant ions 314 are thenimplanted and made to diffuse into the doped regions 18 to form bit linediffusions 315 extending parallel to the polysilicon stripes 16. Thedopant ions and the implant dose and energy can be for example the sameas those specified in connection with the first described embodiment.The second polysilicon layer acts as an implant mask. The bit linediffusions 315 are spaced apart from the edges of the P type regions 18.Surface portions of the P type regions 18 from the edge thereof to thebit line diffusions will form lateral channel portions of the memorycells.

Referring to FIG. 3F, a third layer 316 of polysilicon, for examplehaving a thickness ranging from 200 to 1000 Å, is then formed on thestructure top surface. The third polysilicon layer 316 fills therecesses in the top surface of the structure, in particular the recessesin the second polysilicon layer 312. Dopants can be added to the thirdpolysilicon layer 316 to increase the conductivity thereof. If desired,the third polysilicon layer 316 can be planarized, using conventionalplanarization techniques.

Optionally, as shown in FIG. 3G, a layer 318 of silicide is formed onthe top surface of the third polysilicon layer 316, to further increasethe conductivity thereof. The silicide layer 318, the third polysiliconlayer 316, the second polysilicon layer 122 are selectively removed todefine stripes 319 extending transversally to the bit line diffusions315. The stripes 319 form word lines of the memory cell array. Thestripes 16 of the first polysilicon layer 15, the portions of the thirdpolysilicon layer 116 and the ONO stack 19, 110, 111 are alsoselectively etched to remove all these layers in the regions between theword lines. Preferably, after this step a P type dopant such as boron isimplanted and made to diffuse into the doped layer 14 for purposes ofelectrical isolation between the bit lines, in particular to preventpunch-through from occurring.

Referring to FIG. 3H, a conventional dielectric stack 320 with goodionic gettering properties is then placed over the top surface of thestructure. As in the previous two embodiments, contact openings or vias321 are formed in the dielectric layer 320 down to the surface of thebit line diffusions 315 in prescribed areas outside memory cellssub-arrays. By means of conventional contact formation and metallizationtechniques, metal bit lines 323A, 323B are defined running transversallyto the word lines 319 over the bit line diffusions, contacting thelatter in correspondence of such prescribed areas. Once again, otherarrangements for the metal bit lines are possible.

The memory cell obtained by the process according to the thirdembodiment of the invention is functionally identical to the onesdepicted in FIGS. 1N and 2I, and can be electrically described by meansof the same equivalent diagram of FIG. 1P. However, from a structuralviewpoint this memory cell differs from the one obtained by the processaccording to the first embodiment, since it does not have sidewallcontrol gates formed by polysilicon spacers. The portions of the secondpolysilicon layer 312 filling the spaces between the first polysiliconlayer 15 act as the control gates of transistors T1 and T2. The portions110A, 110B of the ONO stack nitride layer 110 are the memory cell chargestorage elements.

FIGS. 4A to 4D schematically show the main steps of a process accordingto a fourth embodiment of the present invention. As for the second andthird embodiments, this process requires only three layers ofpolysilicon.

Similarly to the first described embodiment, the process according tothis fourth embodiment provides for forming on the substrate 1 the gateoxide layer 12 (FIG. 1A), implanting and diffusing dopant ions to formthe doped layer 14 for setting the memory cells threshold voltage (FIG.1B), forming over the substrate top surface the first polysilicon layer15 (FIG. 1C), etching the first polysilicon layer 15 and the gate oxide12 to form stripes 16 and optionally performing the write enhancementimplant to form the doped regions 18 (FIG. 1D), forming the ONO stack19, 110, 111 over the top surface of the structure, depositing thesecond polysilicon layer 112 (FIG. 1F) on the structure top surface anddefining the polysilicon sidewall spacers 113A, 113B by means of ananisotropic etching of the second polysilicon layer 112.

Referring now to FIG. 4A, an etch process is performed to remove thepreviously formed ONO stack from over the polysilicon stripes 16 and inthe exposed ONO stack portions in between the spacers 113A, 113B.“L”-shaped ONO stack portions 49A, 410A, 411A and 49B, 410B, 411B,covered by the spacers 113A and 113B, are thus left at the two sides ofeach stripe 16. Differently from the previous embodiments, which alsoprovides for forming “L”-shaped ONO stack portions at the sides of thestripes 16, the “L”-shaped ONO stack portions at the sides of a genericstripe 16 are in this case physically separated from the “L”-shaped ONOstack portions at the sides of an adjacent stripe 16.

As schematically depicted in FIG. 4B, an N type dopant is thenselectively implanted and made to diffuse into the P type doped regions18 to form N type bit line diffusions 415 extending parallel to thestripes 16. The dopant ions and the implant dose can for example be thesame as the exemplary ones specified previously in connection with thefirst embodiment. The implant energy can be lower since the dopant ionsdo not have to pass through the ONO stack. Alternatively, this implantcan be performed prior to the etching of the ONO stack, in which casesame implant energies as those previously mentioned can be used.Optionally, a silicide layer (not shown in the drawings) is formed inself-aligned manner over the bit line diffusions 415, to reduce theresistance thereof.

With reference to FIG. 4C, a layer 41 of a dielectric material is thenformed on the structure top surface. The dielectric layer, which can befor example a layer of TEOS with a thickness ranging from 1000 to 7000Å, has the main function of making the structure top surfacesubstantially flat.

The dielectric layer 41 is then removed non-selectively by means of aplasma etching or a CMP or a combination of these two processes down tothe polysilicon stripes 16. During the removal process, also the upperpart of the polysilicon stripes 16, of the “L”-shaped ONO portions 49A,410A, 411A, and 49B, 410B, 411B and of the sidewall spacers 113A, 113Bare removed. The resulting structure is schematically depicted in FIG.4D. Trapezoidal sidewall spacers 413A, 413B are thus obtained, having aflat top surface. The spaces between the spacers 413A, 413B remainsfilled with portions of the dielectric layer 41. The structure topsurface is substantially flat.

With reference to FIG. 4E, a third layer 416 of polysilicon is formed onthe structure top surface, for example by CVD. The third polysiliconlayer has for example a thickness ranging from 1000 to 5000 Å. The thirdpolysilicon layer can be doped to increase the conductivity thereof.Optionally, a silicide layer 418 is formed on top of the polysiliconlayer 416, to further increase the conductivity thereof.

The silicide layer 418 and the third polysilicon layer 416 areselectively removed to define stripes 419 extending transversally to thebit line diffusions 415. The stripes 419 form word lines of the memorycell array. The stripes 16 of the first polysilicon layer 15, theportions of the dielectric layer 41, the sidewall spacers 413A, 413B andthe “L”-shaped portions of ONO stack are also selectively etched toremove all these layers in the regions between the word lines 419.Preferably, after this step a P type dopant such as boron is implantedand made to diffuse into the doped layer 14 for purposes of electricalisolation between the bit lines, in particular to prevent punch-throughfrom occurring.

Referring to FIG. 4F, a conventional dielectric stack 420 with goodionic gettering properties is then placed over the top surface of thestructure. As in the previous embodiments, contact openings 421 areformed in the dielectric layer 420 down to the surface of the bit linediffusions 415 outside memory cells sub-arrays. By means of conventionalcontact formation and metallization techniques metal bit lines 423A,423B are defined running transversally to the word lines 419 over thebit line diffusions 415 and contacting the latter in prescribed areasoutside the memory cell sub-arrays. Different arrangements of the metalbit lines are possible.

The memory cell obtained by the process according to this fourthembodiment is functionally equivalent to that depicted in FIG. 1N, andcan be represented by the electrical equivalent circuit of FIG. 1P.Structurally, the memory cell of FIG. 4F differs from that of FIG. 1Nfor the fact that the space between the spacers 413A, 413B is not filledby polysilicon, but by dielectric. In this way, the parasiticcapacitance of the word line 419 is significantly reduced. In fact, thecapacitive coupling of the word line with the bit line diffusions 415 issmaller compared to the structure of FIG. 1N. The spacers 413A, 413B,which form the gates of the transistors T1 and T3, are electricallyconnected to the word line 419 thanks to the fact that they have a smallflat top surface. Additionally, thanks to the physical separation of the“L”-shaped ONO stack portions of adjacent memory cells along a same wordline, the confinement of the charge in the nitride layer portions 410A,410B is assured, and it is avoided any possible sharing of chargebetween two adjacent memory cells.

The dual charge storage location memory cells fabricated by theprocesses previously described are characterized by the fact of havingtwo physically separated “L”-shaped ONO stack portions, each one at arespective side of the gate of the central transistor T2. The “L”-shapedONO stack portions comprise each a base portion lying on the substratesurface, and an upright portion lying on a respective side of the gateof the central transistor. In the first three embodiments previouslydescribed, the “L”-shaped ONO stack portions at the sides of the gate ofa given memory cells are connected to the “L”-shaped ONO stack portionsof the two adjacent memory cells along the word line of the memory cellarray. Differently, in the fourth embodiment the “L”-shaped ONO stackportions of any memory cell in the array are physically separated fromthe “L”-shaped ONO stack portions of the adjacent memory cells along theword line.

Differently from the processes described in U.S. Pat. No. 6,248,633 B1,no disposable polysilicon sidewall spacers are used, and the process isconsequently simpler.

The process according to the present invention is suitable for themanufacturing of dual charge storage location memory cells of the EPROM,EEPROM and Flash EPROM types.

The dual charge storage location memory cell realized in accordance withthe process of the invention are also adapted to be used as multi-levelmemory cells. With reference to FIG. 1P, this means that the amount ofcharge trapped in the charge retention element of each of thetransistors T1 and T3 can take more than two values (absence of chargeor presence of charge), for example four values, corresponding to fourdifferent threshold voltages. Each transistor T1 and T3 would in thiscase store more than one bit, for example two bits in the case of fourdifferent threshold voltages. The memory cell storage capacity is twicethe storage capacity of the individual transistors T1 and T3.

Although the present invention has been disclosed and described by wayof some embodiments, it is apparent to those skilled in the art thatseveral modifications to the described embodiments, as well as otherembodiments of the present invention are possible without departing fromthe scope thereof as defined in the appended claims.

For example, although in the present description reference has alwaysbeen made to ONO sandwiches, this is not to be considered a limitationfor the present invention. Other types of materials may in fact be used.For example, the silicon nitride layer may be substituted for by adifferent charge trapping dielectric material. Also, one or both of thesilicon dioxide layers forming the bottom and top layers of the ONOsandwich may be substituted for by different dielectrics, particularlyhigh-k (i.e., high dielectric constant) dielectrics such as thepromising ZrO₂ and HfO₂.

1. (canceled)
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 5. (canceled) 6.A process for manufacturing an array of electrically programmable dualcharge storage location memory cells, comprising the steps of: forminginsulated gate stripes over a semiconductor substrate; formingcharge-storage elements over the substrate surface and adjacent to sidesof the insulated gate stripes, the charge-storage elements comprising alayer of charge-trapping material sandwiched between opposing layers ofa dielectric material; forming side control gates over each of thecharge-storage elements; forming bit line diffusions in the substratebetween the insulated gate stripes extending parallel thereto; formingword lines transversal to the insulated gate stripes electricallyconnecting the side control gates and the insulated gate stripes; andremoving the insulated gate stripes and the charge-storage elements inregions between the word lines to form physically separated insulatedgates and charge-storage elements for the memory cells of the array. 7.The process of claim 6, wherein one layer of the dielectric material ofthe charge storage-element lies adjacent to both a portion of thesubstrate and a portion of a side of the gate stripes, the portion ofthe charge-storage element adjacent to the substrate forming a basecharge-confining layer and the portion adjacent to the gate stripesforming an upright charge-confining layer.
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 29. A process for manufacturing an array of electricallyprogrammable dual charge storage location memory cells, comprising thesteps of: forming insulated gate stripes over a semiconductor substrate;forming charge-confining layers stack portions of a dielectric-chargetrapping material-dielectric layers stack over the substrate surface atthe sides of the insulated gate stripes, the charge trapping materiallayer in each charge-confining layers stack portion forming a chargestorage element; forming side control gates over each of thecharge-confining layers stack portions; forming bit line diffusions inthe substrate between the insulated gate stripes extending parallelthereto; forming word lines transversal to the insulated gate stripeselectrically connecting the side control gates and the insulated gatestripes; and removing the insulated gate stripes and thecharge-confining layers stack portions in regions between the word linesto form physically separated insulated gates and charge-confining layersstack portions for the memory cells of the array, characterized in thateach of the charge-confining layers stack portions at the sides of thegate has an “L” shape, with a base charge-confining layers stack portionlying on the substrate surface and an upright charge-confining layersstack portion lying against a respective side of the insulated gate. 30.The process according to claim 29, in which the charge trapping materiallayer is a layer of silicon nitride.
 31. The process according to claim29, in which the dielectrics in the charge-confining layers stackportions are silicon oxide.
 32. The process according to claim 29, inwhich the dielectrics in the charge-confining layers stack portions area high dielectric constant material.
 33. The process according to claim29, comprising the steps of, after forming the insulated gate stripes,introducing into the substrate dopants of the first conductivity typeusing the insulated gate stripes as a mask, to form write enhancementdoped regions of the first conductivity type between the insulated gatestripes, the write enhancement region having a doping level higher thanthat of the substrate.
 34. The process according to claim 29, comprisingthe steps of: forming the dielectric-charge trapping material-dielectriclayers stack on the insulated gate stripes and on the substrate surfacebetween the insulated gate stripes; forming a first polysilicon layer onthe layers stack, and anisotropically etching the polysilicon layer toform sidewall spacers at the sides of the insulated gate stripes;introducing dopants of a second conductivity type in the substrate usingthe sidewall spacers as a mask, to form bit line diffusions between theinsulated gate stripes and extending parallel thereto; depositing asecond polysilicon layer and removing the second polysilicon layer andthe layers stack down to the insulated gate stripes, thereby leavingcharge-confining layers stack portions of the layers stack on thesubstrate surface between the insulated gate stripes and secondpolysilicon layer portions filling gaps between the charge-confininglayers stack portions and a top surface of the insulated gate stripes;depositing and patterning a third polysilicon layer to form word linestransversal to the insulated gate stripes; selectively removing theinsulated gate stripes, the sidewall spacers, the charge-confininglayers stack portions and the second polysilicon layer portions fromregions in between the word lines.
 35. The process according to claim34, in which said forming second polysilicon layer portions on thesidewall spacers and removing the layers stack from over the insulatedgate stripes comprises the steps of: forming a second polysilicon layeron the layers stack and on the sidewall spacers; and removing the secondpolysilicon layer and the layers stack down to the insulated gatestripes, leaving the second polysilicon layer portions to fill recessesat the sides of the sidewall spacers.
 36. The process according to claim35, in which said removing the second polysilicon layer comprisesperforming a plasma etch or a chemical-mechanical polishing or acombination thereof.
 37. The process according to claim 29, comprisingthe steps of: covering the insulated gate stripes and the substratesurface therebetween with a masking layer; introducing dopants of asecond conductivity type into the substrate to form bit line diffusionsextending parallel to the insulated gate stripes, the masking layercausing the bit line diffusions to be spaced apart from the sides of theinsulated gate stripes; removing the masking layer and covering theinsulated gate stripes and the substrate surface with thedielectric-charge trapping material-dielectric layers stack; depositinga first polysilicon layer on the layers stack; removing the firstpolysilicon layer and the layers stack down to the insulated gatestripes, leaving charge-confining layers stack portions of thedielectric-charge trapping material-dielectric layers stack covered byfirst polysilicon layer portions on the substrate surface between theinsulated gate stripes; depositing and patterning a third polysiliconlayer to form word lines transversal to the insulated gate stripes; andselectively removing the insulated gate stripes, the charge-confininglayers stack portions and the first polysilicon layer portions fromregions in between the word lines.
 38. The process according to claim37, in which said covering the insulated gate stripes and the substratesurface at the sides of the insulated gate stripes with a masking layercomprises the steps of: forming on the insulated gate stripes and on thesubstrate surface between the insulated gate stripes an etch-stop layerintended to act as an etch-stop in the step of removing the maskinglayer, and forming on the etch-stop layer the masking layer.
 39. Theprocess according to claim 38, in which said etch-stop layer is an oxidelayer and said masking layer is a nitride layer.
 40. The processaccording to claim 35, in which said removing the first polysiliconlayer and the layers stack down to the insulated gate stripes comprisesperforming a plasma etch or a chemical-mechanical polishing or acombination thereof.
 41. The process according to claim 29, comprisingthe steps of: forming the dielectric-charge trapping material-dielectriclayers stack on the insulated gate stripes and on the substrate surfacetherebetween; depositing a liquid-phase gap-fill material on the layersstack and making the liquid-phase gap-fill material denser, the gap-fillmaterial filling gaps in the layers stack between the insulated gatestripes and the layers stack over the insulated gate stripes, the latterbeing substantially free of gap-fill material; removing the layers stackfrom over the insulated gate stripes using the gap-fill material as aprotection to leave charge-confining layers stack portions of thedielectric-charge trapping material-dielectric layers stack in betweenthe insulated gate stripes; removing the gap-fill material from over thecharge-confining layers stack portions; depositing a first polysiliconlayer; introducing dopants of a second conductivity type into thesubstrate using the first polysilicon layer as a mask to form bit linediffusions spaced apart from the sides of the insulated gate stripes;depositing a second polysilicon layer; patterning the third polysiliconlayer and the second polysilicon layer to form word lines transversal tothe insulated gate stripes; selectively removing the insulated gatestripes and the charge-confining layers stack portions from regions inbetween the word lines.
 42. The process according to claim 41, in whichsaid depositing the liquid-phase gap-fill material comprises depositingthe liquid-phase gap-fill material by spinning the substrate.
 43. Theprocess according to claim 42, in which said liquid-phase gap-fillmaterial is a bottom anti-reflecting coating material or a spin-onglass.
 44. The process according to claim 29, comprising the steps of:forming the dielectric-charge trapping material-dielectric layers stackon the insulated gate stripes and on the substrate surface therebetween;forming a first polysilicon layer on the layers stack, and etching thepolysilicon layer to form sidewall spacers at the sides of the insulatedgate stripes; introducing dopants of a second conductivity type into thesubstrate using the sidewall spacers as a mask, to form bit linediffusions between the insulated gate stripes extending parallelthereto; removing the layers stack from over the bit line diffusions;depositing a dielectric layer, the dielectric layer filling gaps betweenthe insulated gate stripes; planarizing the structure down to theinsulated gate stripes, partially removing a top portion of theinsulated gate stripes and of the sidewall spacers to make a top surfacethereof substantially flat, gap-filling portions of the dielectric layerfilling gaps between the insulated gate stripes; depositing andpatterning a second polysilicon layer to form word lines; andselectively removing the insulated gate stripes, the sidewall spacersand the dielectric-charge trapping material-dielectric layers stack fromregions in between the word lines.
 45. The process according to claim44, in which said planarizing the structure comprises performing aplasma etch or a chemical-mechanical polishing or a combination thereof.46. (canceled)
 47. The dual charge storage location memory cellaccording to claim 45, in which said side control gates are polysiliconsidewall spacers formed at the sides of the insulated gate.